標題: Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment
作者: Yuan, Fang-Yuan
Deng, Ning
Shih, Chih-Cheng
Tseng, Yi-Ting
Chang, Ting-Chang
Chang, Kuan-Chang
Wang, Ming-Hui
Chen, Wen-Chung
Zheng, Hao-Xuan
Wu, Huaqiang
Qian, He
Sze, Simon M.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: HfO2-based RRAM;Nitridation;Endurance;Space charge limit current
公開日期: 26-Oct-2017
摘要: A nitridation treatment technology with a urea/ammonia complex nitrogen source improved resistive switching property in HfO2-based resistive random access memory (RRAM). The nitridation treatment produced a high performance and reliable device which results in superior endurance (more than 10(9) cycles) and a self-compliance effect. Thus, the current conduction mechanism changed due to defect passivation by nitrogen atoms in the HfO2 thin film. At a high resistance state (HRS), it transferred to Schottky emission from Poole-Frenkel in HfO2-based RRAM. At low resistance state (LRS), the current conduction mechanism was space charge limited current (SCLC) after the nitridation treatment, which suggests that the nitrogen atoms form Hf-N-Ox vacancy clusters (V-o(+)) which limit electron movement through the switching layer.
URI: http://dx.doi.org/10.1186/s11671-017-2330-3
http://hdl.handle.net/11536/144007
ISSN: 1556-276X
DOI: 10.1186/s11671-017-2330-3
期刊: NANOSCALE RESEARCH LETTERS
Volume: 12
起始頁: 0
結束頁: 0
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