|標題:||Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment|
Sze, Simon M.
Department of Electronics Engineering and Institute of Electronics
|關鍵字:||HfO2-based RRAM;Nitridation;Endurance;Space charge limit current|
|摘要:||A nitridation treatment technology with a urea/ammonia complex nitrogen source improved resistive switching property in HfO2-based resistive random access memory (RRAM). The nitridation treatment produced a high performance and reliable device which results in superior endurance (more than 10(9) cycles) and a self-compliance effect. Thus, the current conduction mechanism changed due to defect passivation by nitrogen atoms in the HfO2 thin film. At a high resistance state (HRS), it transferred to Schottky emission from Poole-Frenkel in HfO2-based RRAM. At low resistance state (LRS), the current conduction mechanism was space charge limited current (SCLC) after the nitridation treatment, which suggests that the nitrogen atoms form Hf-N-Ox vacancy clusters (V-o(+)) which limit electron movement through the switching layer.|
|期刊:||NANOSCALE RESEARCH LETTERS|
|Appears in Collections:||Articles|
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