標題: Efficiency Enhancement of Multicrystalline Silicon Solar Cells by Inserting Two-Step Growth Thermal Oxide to the Surface Passivation Layer
作者: Liao, Shun Sing
Lin, Yueh Chin
Chuang, Chuan Lung
Chang, Edward Yi
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-Jan-2017
摘要: In this study, the efficiency of the multicrystalline was improved by inserting a two-step growth thermal oxide layer as the surface passivation layer. Two-step thermal oxidation process can reduce carrier recombination at the surface and improve cell efficiency. The first oxidation step had a growth temperature of 780 degrees C, a growth time of 5 min, and with N-2/O-2 gas flow ratio 12 : 1. The second oxidation had a growth temperature of 750 degrees C, growth time of 20 min, and under pure N-2 gas environment. Carrier lifetime was increased to 15.45 mu s, and reflectance was reduced 0.52% using the two-step growth method as compared to the conventional one-step growth oxide passivation method. Consequently, internal quantum efficiency of the solar cell increased 4.1%, and conversion efficiency increased 0.37%. These results demonstrate that the two-step thermal oxidation process is an efficient way to increase the efficiency of the multicrystalline silicon solar cells.
URI: http://dx.doi.org/10.1155/2017/9503857
http://hdl.handle.net/11536/143970
ISSN: 1110-662X
DOI: 10.1155/2017/9503857
期刊: INTERNATIONAL JOURNAL OF PHOTOENERGY
起始頁: 0
結束頁: 0
Appears in Collections:Articles


Files in This Item:

  1. 188885aa25156e915d6330b6ccd36518.pdf