|標題:||Very large photoresponsiviy and high photocurrent linearity for Ge-dot/SiO2/SiGe photoMOSFETs under gate modulation|
Department of Electronics Engineering and Institute of Electronics
|摘要:||We report a novel visible-near infrared photoMOSFET containing a self-organized, gate-stacking heterostructure of SiO2/Ge-dot/SiO2/SiGe-channel on Si substrate that is simultaneously fabricated in a single oxidation step. Our typical photoMOSFETs exhibit very large photoresponsivity of 1000-3000A/W at low optical power (< 0.1 mu W) or large photocurrent gain of 10(3)-10(8)A/A with a wide dynamic power range of at least 6 orders of magnitude (nW-mW) linearity at 400-1250 nm illumination, depending on whether the photoMOSFET operates at V-G = + 3- + 4.5V or -1- + 1V. Numerical simulations reveal that photocarrier confinement within the Ge dots and the SiGe channel modifies the oxide field and the surface potential of SiGe, significantly increasing photocurrent and improving linearity. (C) 2017 Optical Society of America|
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