標題: The effect of preheating treatment on anodic Al2O3 formed on sputtered Al thin films
作者: Chiu, RL
Chang, PH
Tung, CH
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-三月-1996
摘要: Al2O3 layers were grown by anodizing Al films sputtered on borophosphosilicate glass/SiO2/Si substrates and subsequently characterized by transmission electron microscopy, and by current-voltage and capacitance-voltage measurements using a metal/insulator/metal structure. Amorphous anodic oxide is formed on nonpreannealed Al film but a complex oxide film generally consisting of five sublayers (designated as amorphous I, porous I, crystalline, porous II, and amorphous II) is formed on preannealed Al film. Freshly formed anodic oxide is always amorphous in both preannealed and nonpreannealed Al thin films. The growth of the crystalline layer in preannealed samples is due to the amorphous-to-crystalline transition of the amorphous II layer. The porous I layer is formed well before the crystalline layer. The voids in this layer are probably due to the trapping of oxygen at the sites of crystalline oxide. The voids in the porous II layer are small and their formation can be attributed to the volume shrinkage associated with the amorphous-to-crystalline transition of the amorphous II layer. The amorphous oxide films exhibit excellent dielectric properties. The dielectric properties of the complex oxide are much inferior and vary significantly due to structural variation.
URI: http://hdl.handle.net/11536/1439
ISSN: 0013-4651
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 143
Issue: 3
起始頁: 984
結束頁: 990
顯示於類別:期刊論文


文件中的檔案:

  1. A1996UC20300042.pdf