標題: Comparative investigation of Schottky barrier height of Ni/n-type Ge and Ni/n-type GeSn
作者: Jheng, Li Sian
Li, Hui
Chang, Chiao
Cheng, Hung Hsiang
Li, Liang Chen
奈米科技中心
Center for Nanoscience and Technology
公開日期: 1-Sep-2017
摘要: We report an investigation of the Schottky barrier height (SBH) of Ni/n-type Ge and Ni/n-type GeSn films that is annealed at a wide range of temperatures. Both voltage-and temperature-dependent current-voltage (I-V) measurements are performed. From the analysis of these nonlinear I-V traces, the SBH is found and the results shows that the SBH of Ni/n-type GeSn (a) is smaller than that of Ni/n-type Ge and (b) decreases with the Sn content of the surface GeSn layer associated with the thermal annealing. By modeling the composition-and strain-dependent energy bandgap (E-g), the relationship between the SBH and Eg is established and it is found that SBH/E-g similar to 0.8. These results suggest that the GeSn film could serve as an interfacial layer for the reduction of the SBH in Ge-based electronic devices that are desirable for applications. (C) 2017 Author(s).
URI: http://dx.doi.org/10.1063/1.4997348
http://hdl.handle.net/11536/143858
ISSN: 2158-3226
DOI: 10.1063/1.4997348
期刊: AIP ADVANCES
Volume: 7
Issue: 9
起始頁: 0
結束頁: 0
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