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dc.contributor.authorLiu, Xinkeen_US
dc.contributor.authorGu, Hongen_US
dc.contributor.authorLi, Kuilongen_US
dc.contributor.authorGuo, Lunchunen_US
dc.contributor.authorZhu, Deliangen_US
dc.contributor.authorLu, Youmingen_US
dc.contributor.authorWang, Jianfengen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorLiu, Zhihongen_US
dc.contributor.authorLiu, Wenjunen_US
dc.contributor.authorChen, Linen_US
dc.contributor.authorFang, Jianpingen_US
dc.contributor.authorAng, Kah-Weeen_US
dc.contributor.authorXu, Keen_US
dc.contributor.authorAo, Jin-Pingen_US
dc.date.accessioned2019-04-03T06:41:58Z-
dc.date.available2019-04-03T06:41:58Z-
dc.date.issued2017-09-01en_US
dc.identifier.issn2158-3226en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4999810en_US
dc.identifier.urihttp://hdl.handle.net/11536/143857-
dc.description.abstractThis paper reported AlGaN/GaN high electron mobility transistors (HEMTs) with low sub-threshold swing SS on free-standing GaN wafer. High quality AlGaN/GaN epi-layer has been grown by metal-organic chemical vapor deposition (MOCVD) on free-standing GaN, small full-width hall maximum (FWHM) of 42.9 arcsec for (0002) GaN XRD peaks and ultralow dislocation density (similar to 10(4)-10(5) cm(-2)) were obtained. Due to these extremely high quality material properties, the fabricated AlGaN/GaN HEMTs achieve a low SS (similar to 60 mV/decade), low hysteresis of 54 mV, and high peak electron mobility mu(eff) of similar to 1456 cm(2)V(-1)s(-1). Systematic study of materials properties and device characteristics exhibits that GaN-on-GaN AlGaN/GaNHEMTsare promising candidate for next generation high power device applications. (C) 2017 Author(s).en_US
dc.language.isoen_USen_US
dc.titleAlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN waferen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4999810en_US
dc.identifier.journalAIP ADVANCESen_US
dc.citation.volume7en_US
dc.citation.issue9en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000412070600078en_US
dc.citation.woscount1en_US
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