標題: AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer
作者: Liu, Xinke
Gu, Hong
Li, Kuilong
Guo, Lunchun
Zhu, Deliang
Lu, Youming
Wang, Jianfeng
Kuo, Hao-Chung
Liu, Zhihong
Liu, Wenjun
Chen, Lin
Fang, Jianping
Ang, Kah-Wee
Xu, Ke
Ao, Jin-Ping
光電工程學系
光電工程研究所
Department of Photonics
Institute of EO Enginerring
公開日期: 1-Sep-2017
摘要: This paper reported AlGaN/GaN high electron mobility transistors (HEMTs) with low sub-threshold swing SS on free-standing GaN wafer. High quality AlGaN/GaN epi-layer has been grown by metal-organic chemical vapor deposition (MOCVD) on free-standing GaN, small full-width hall maximum (FWHM) of 42.9 arcsec for (0002) GaN XRD peaks and ultralow dislocation density (similar to 10(4)-10(5) cm(-2)) were obtained. Due to these extremely high quality material properties, the fabricated AlGaN/GaN HEMTs achieve a low SS (similar to 60 mV/decade), low hysteresis of 54 mV, and high peak electron mobility mu(eff) of similar to 1456 cm(2)V(-1)s(-1). Systematic study of materials properties and device characteristics exhibits that GaN-on-GaN AlGaN/GaNHEMTsare promising candidate for next generation high power device applications. (C) 2017 Author(s).
URI: http://dx.doi.org/10.1063/1.4999810
http://hdl.handle.net/11536/143857
ISSN: 2158-3226
DOI: 10.1063/1.4999810
期刊: AIP ADVANCES
Volume: 7
Issue: 9
起始頁: 0
結束頁: 0
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