標題: A novel method for extracting the metallurgical channel length of MOSFET's using a single device
作者: Li, HH
Chu, YL
Wu, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-三月-1996
摘要: A new charge-pumping method with de source/drain biases and specified gate waveforms is proposed to extract the metallurgical channel length of MOSFET's by using a single device. Using two charge-pumping currents of a single nMOSFET measured under different V-GL (V-GH for pMOSFET's), the metallurgical channel length can be easily extracted with an accuracy of 0.02 mu m. It is shown that the proposed novel method is self-consistent with the results obtained by the charge-pumping current measured from multidevices under different gate pulse waveforms and bias conditions.
URI: http://dx.doi.org/10.1109/55.485175
http://hdl.handle.net/11536/1438
ISSN: 0741-3106
DOI: 10.1109/55.485175
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 17
Issue: 3
起始頁: 85
結束頁: 87
顯示於類別:期刊論文


文件中的檔案:

  1. A1996TX68200002.pdf