標題: Fabrication of thin film transistors by chemical mechanical polished polycrystalline silicon films
作者: Chang, CY
Lin, HY
Lei, TF
Cheng, JY
Chen, LP
Dai, BT
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-三月-1996
摘要: A top-gate p-channel polycrystalline thin film transistor (TFT) has been fabricated using the polycrystalline silicon (poly-Si) film as-deposited by ultrahigh vacuum chemical vapor deposition (UHV/CVD) and polished by chemical mechanical polishing (CMP), In this process, long-term recrystallization in channel films is not needed. A maximum field effect mobility of 58 cm(2)/V-s, ON/OFF current ratio of 1.110(7), and threshold voltage of -0.54 V were obtained. The characteristics are not poor. In this work, therefore, we have demonstrated a new method to fabricate poly-Si TFT's.
URI: http://dx.doi.org/10.1109/55.485180
http://hdl.handle.net/11536/1437
ISSN: 0741-3106
DOI: 10.1109/55.485180
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 17
Issue: 3
起始頁: 100
結束頁: 102
顯示於類別:期刊論文


文件中的檔案:

  1. A1996TX68200007.pdf