Fabrication,Bonding and Characterization of High Power Semiconductor Lasers Emitting at 800nm Range
|關鍵字:||高功率半導體雷射;共晶鍵合封裝;量子井雷射;寬波導雷射;High Power Semiconductor Lasers;Eutectic Die Bonding;Quantum Well Lasers;Broad Area Lasers|
A novel epi-structure called asymmetric cladding of single GaAs quantum well laser structure design is presented. During fabrication process, a current blocking design have been utilized in order to reduce the carrier density at the facet,which can suppress catastrophic optical damage (COD). An anti-reflection (AR) and high reflection (HR) facet coating have been used as well in order to improve the slope efficiency. Bonding window of CuW C-mount and submount have been established by operating different bonding conditions. Results of destructive die shear test after bonding satisfies international standard MIL-STD-883G, showing a good bonding quality. A narrower far field angle of 33˚ compare to 45˚ of traditional epi-structure design have been demonstrated. Results of far field angle is well-consisted to simulation result. Power conversion efficiency of 2mm cavity length device is as high as 55%, with output power above 7W. Thermal resistance measurement after die bonding is below 2(K/W), showing a good ability of heat dissipation. The overall characteristics of this high power semiconductor laser device based on this novel epi-structure design are as good as the characteristics of commercial laser products, which can satisfy the demands of current applications.