標題: The influence of Ge-implantation on the electrical characteristics of the ultra-shallow junction formed by using silicide as a diffusion source
作者: Huang, CT
Lei, TF
Chu, CH
Shvu, SH
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-三月-1996
摘要: The electrical characteristics of ultra-shallow p(+)/n junctions formed by implanting a 60 keV Ge+ into a TiSi2 layer have been studied. A very low reverse leakage current density (congruent to 0.4 nA/cm(2) at -5 V) and a very good forward ideality factor n (congruent to 1.001) were achieved in these ultra-shallow p(+)/n junctions, From the secondary ion mass spectrometry (SIMS) analysis, the junction depth was measured to be 600 Angstrom and the surface concentration was about 3 times higher than that of the conventional samples.
URI: http://dx.doi.org/10.1109/55.485176
http://hdl.handle.net/11536/1420
ISSN: 0741-3106
DOI: 10.1109/55.485176
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 17
Issue: 3
起始頁: 88
結束頁: 90
顯示於類別:期刊論文


文件中的檔案:

  1. A1996TX68200003.pdf