標題: Characterization of GaN epitaxial layers on SiC substrates with AlxGa1-xN buffer layers
作者: Lin, CF
Cheng, HC
Feng, MS
Chi, GC
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: GaN;epitaxial layers;AlxGa1-xN buffer layers;6H-SiC substrates
公開日期: 18-十二月-1997
摘要: High quality GaN epitaxial layers were obtained with AlxGa1-xN buffer layers on 6H-SiC substrates. The low-pressure metalorganic chemical vapor deposition (LP-MOCVD) method was used. The 500 Angstrom thick buffer layers of AlxGa1-xN (0 less than or equal to x less than or equal to 1) were deposited on SiC substrates at 1025 degrees C. The FWHM of GaN (0004) X-ray curves are 2-3 arcmin, which vary with the Al content in AlxGa1-xN buffer layers. An optimum Al content is found to be 0.18. The best GaN epitaxial film has the mobility and carrier concentration about 564 cm(2) V-1 s(-1) and 1.6 x 10(17) cm(-3) at 300 K. The splitting diffraction angle between GaN and AlxGa1-xN were also analyzed from X-ray diffraction curves. (C) 1997 Elsevier Science S.A.
URI: http://hdl.handle.net/11536/141
ISSN: 0921-5107
期刊: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
Volume: 50
Issue: 1-3
起始頁: 25
結束頁: 28
顯示於類別:期刊論文


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