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dc.contributor.authorYang, CSen_US
dc.contributor.authorLai, YJen_US
dc.contributor.authorChou, WCen_US
dc.contributor.authorChen, WKen_US
dc.contributor.authorLee, MCen_US
dc.contributor.authorKuo, MCen_US
dc.contributor.authorLee, Jen_US
dc.contributor.authorShen, JLen_US
dc.contributor.authorJang, DJen_US
dc.contributor.authorCheng, YCen_US
dc.date.accessioned2014-12-08T15:19:43Z-
dc.date.available2014-12-08T15:19:43Z-
dc.date.issued2005-02-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1834985en_US
dc.identifier.urihttp://hdl.handle.net/11536/14015-
dc.description.abstractThe morphology and the size-dependent photoluminescence (PL) spectra of the type-II ZnTe quantum dots (QDs) grown in a ZnSe matrix were obtained. The coverage of ZnTe varied from 2.5 to 3.5 monolayers (MLs). The PL peak energy decreased as the dot size increased. Excitation power and temperature-dependent PL spectra are used to characterize the optical properties of the ZnTe quantum dots. For 2.5- and 3.0-ML samples, the PL peak energy decreased monotonically as the temperature increased. However, for the 3.5-ML sample, the PL peak energy was initially blueshifted and then redshifted as the temperature increased above 40 K. Carrier thermalization and carrier transfer between QDs are used to explain the experimental data. A model of temperature-dependent linewidth broadening is employed to fit the high-temperature data. The activation energy, which was found by the simple PL intensity quenching model, of the 2.5, 3.0, and 3.5 MLs were determined to be 6.35, 9.40, and 18.87 meV, respectively. (C) 2005 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleOptical properties of self-assembled ZnTe quantum dots grown by molecular-beam epitaxyen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1834985en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume97en_US
dc.citation.issue3en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000226778300020-
dc.citation.woscount12-
Appears in Collections:Articles


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