Search


  • 1

Results 1-7 of 7 (Search time: 0.003 seconds).

Item hits:
Issue DateTitleAuthor(s)
1-May-2005RF MOSFET characterization by four-port measurementWu, SD; Huang, GW; Chen, KM; Tseng, HC; Hsu, TL; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
20052-bit poly-Si-TFT nonvolatile memory using hafnium oxide, hafnium silicate and zirconium silicateLin, YH; Chien, CH; Chou, TH; Chao, TS; Chang, CY; Lei, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2005Impact of post-deposition-annealing on the electrical characteristics of HfOxNy gate dielectric on Ge substrateCheng, CC; Chien, CH; Chen, CW; Hsu, SL; Yang, MY; Huang, CC; Yang, FL; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Impact of hot carrier stress on RF power characteristics of MOSFETsHuang, SY; Chen, KM; Huang, GW; Yang, DY; Chang, CY; Liang, V; Tseng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2005Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistorsHuang, SY; Chen, KM; Huang, GW; Liang, V; Tseng, HC; Hsu, TL; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2005Noise parameters computation of microwave devices using genetic algorithmsChen, HY; Huang, GW; Chen, KM; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2005An X-band front-end module using HTS technique for a commercial dual mode radarNiu, DC; Huang, TW; Lee, HJ; Chang, CY; 電信工程研究所; Institute of Communications Engineering