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Issue DateTitleAuthor(s)
2000Optimization of short channel effect by arsenic P-Halo implant through polysilicon gate for 0.12uw P-MOSFETChen, C; Chang, CY; Chou, JW; Huang, CT; Lin, KC; Cheng, YC; Lin, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2000New insights on RF CMOS stability related to bias, scaling, and temperatureSu, JG; Wong, SC; Chang, CY; Chiu, KY; Huang, TY; Ou, CT; Kao, CH; Chao, CJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2000Characterization of NH3 plasma-treated Ba0.7Sr0.3TiO3 thin filmsWuu, DS; Horng, RH; Liao, FC; Leu, CC; Huang, TY; Sze, SM; Chen, HY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2000Plasma process induced damage in sputtered TiN metal gate capacitors with ultra-thin nitrided oxideChen, CC; Lin, HC; Chang, CY; Chao, TS; Huang, SC; Wu, WF; Huang, TY; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2000Study of boron effects on the reaction of Co and Si1-xGex at various temperaturesHuang, HJ; Chen, KM; Chang, CY; Huang, TY; Chang, TC; Chen, LP; Huang, GW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2000Pulsed KrF laser annealing of Mo/Si0.76Ge0.24Luo, JS; Lin, WT; Chang, CY; Shih, PS; Chang, TC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2000Interfacial reactions of Ni/Si0.76Ge0.24 and Ni/Si1-x-yGexCy by vacuum annealing and pulsed KrF laser annealingLuo, JS; Lin, WT; Chang, CY; Shih, PS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-2000Copper electroplating for future ultralarge scale integration interconnectionGau, WC; Chang, TC; Lin, YS; Hu, JC; Chen, LJ; Chang, CY; Cheng, CL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2000Effects of O-2 plasma treatment on the electric and dielectric characteristics of Ba0.7Sr0.3TiO3 thin filmsLeu, CC; Chan, SH; Chen, HY; Horng, RH; Wuu, DS; Wu, LH; Huang, TY; Chang, CY; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2000Deposition of polycrystalline Si and SiGe by ultra-high vacuum chemical molecular epitaxyChen, KM; Huang, HJ; Chang, CY; Chen, LP; Huang, GW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics