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Issue DateTitleAuthor(s)
1997A model for photoresist-induced charging damage in ultra-thin gate oxidesLin, HC; Chien, CH; Wang, MF; Huang, TY; Chang, CY; 交大名義發表; 奈米中心; National Chiao Tung University; Nano Facility Center
2000Plasma process induced damage in sputtered TiN metal gate capacitors with ultra-thin nitrided oxideChen, CC; Lin, HC; Chang, CY; Chao, TS; Huang, SC; Wu, WF; Huang, TY; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-1997The role of a resist during O-2 plasma ashing and its impact on the reliability evaluation of ultrathin gate oxidesChien, CH; Chang, CY; Lin, HC; Chang, TF; Hsien, SK; Tseng, HC; Chiou, SG; Huang, TY; 交大名義發表; 奈米中心; National Chiao Tung University; Nano Facility Center
2002Process-related reliability issues toward sub-100 nm device regimeChang, CY; Chao, TS; Lin, HC; Chien, CH; 交大名義發表; National Chiao Tung University
2000Improved plasma charging immunity in ultra-thin gate oxide with fluorine and nitrogen implantationChen, CC; Lin, HC; Chang, CY; Huang, CC; Chien, CH; Huang, TY; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1999Breakdown characteristics of ultra-thin gate oxides caused by plasma chargingChen, CC; Lin, HC; Chang, CY; Chien, CH; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2001Thermal stability of PVD TiN gate and its impacts on characteristics of CMOS transistorsWang, MF; Kao, YC; Huang, TY; Lin, HC; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics