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Issue DateTitleAuthor(s)
2000New insights on RF CMOS stability related to bias, scaling, and temperatureSu, JG; Wong, SC; Chang, CY; Chiu, KY; Huang, TY; Ou, CT; Kao, CH; Chao, CJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2000Characterization of NH3 plasma-treated Ba0.7Sr0.3TiO3 thin filmsWuu, DS; Horng, RH; Liao, FC; Leu, CC; Huang, TY; Sze, SM; Chen, HY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1997A model for photoresist-induced charging damage in ultra-thin gate oxidesLin, HC; Chien, CH; Wang, MF; Huang, TY; Chang, CY; 交大名義發表; 奈米中心; National Chiao Tung University; Nano Facility Center
2000Plasma process induced damage in sputtered TiN metal gate capacitors with ultra-thin nitrided oxideChen, CC; Lin, HC; Chang, CY; Chao, TS; Huang, SC; Wu, WF; Huang, TY; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2000Study of boron effects on the reaction of Co and Si1-xGex at various temperaturesHuang, HJ; Chen, KM; Chang, CY; Huang, TY; Chang, TC; Chen, LP; Huang, GW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2000Effects of O-2 plasma treatment on the electric and dielectric characteristics of Ba0.7Sr0.3TiO3 thin filmsLeu, CC; Chan, SH; Chen, HY; Horng, RH; Wuu, DS; Wu, LH; Huang, TY; Chang, CY; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-1997The role of a resist during O-2 plasma ashing and its impact on the reliability evaluation of ultrathin gate oxidesChien, CH; Chang, CY; Lin, HC; Chang, TF; Hsien, SK; Tseng, HC; Chiou, SG; Huang, TY; 交大名義發表; 奈米中心; National Chiao Tung University; Nano Facility Center
2000Improved plasma charging immunity in ultra-thin gate oxide with fluorine and nitrogen implantationChen, CC; Lin, HC; Chang, CY; Huang, CC; Chien, CH; Huang, TY; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1999Breakdown characteristics of ultra-thin gate oxides caused by plasma chargingChen, CC; Lin, HC; Chang, CY; Chien, CH; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2001Thermal stability of PVD TiN gate and its impacts on characteristics of CMOS transistorsWang, MF; Kao, YC; Huang, TY; Lin, HC; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics