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Issue DateTitleAuthor(s)
2004Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistorsHuang, SY; Chen, KM; Huang, GW; Hsu, TL; Tseng, HC; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2006Characterization and modeling of RF MOSFETs under hot carrier stress and oxide breakdownHuang, SY; Chen, KM; Huang, GW; Yang, DY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003Layout design of high-quality SOI varactorChen, HY; Chen, KM; Huang, GW; Huang, CH; Yang, TH; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-1996Light emission from the porous boron delta-doped Si superlatticeChang, TC; Yeh, WK; Hsu, MY; Chang, CY; Lee, CP; Jung, TG; Tsai, WC; Huang, GW; Mei, YJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-2005RF MOSFET characterization by four-port measurementWu, SD; Huang, GW; Chen, KM; Tseng, HC; Hsu, TL; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2000Study of boron effects on the reaction of Co and Si1-xGex at various temperaturesHuang, HJ; Chen, KM; Chang, CY; Huang, TY; Chang, TC; Chen, LP; Huang, GW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2000Deposition of polycrystalline Si and SiGe by ultra-high vacuum chemical molecular epitaxyChen, KM; Huang, HJ; Chang, CY; Chen, LP; Huang, GW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-1996Disordered Si/SiGe superlattices grown by ultrahigh vacuum chemical vapor depositionChang, TC; Yeh, WK; Chang, CY; Jung, TG; Tsai, WC; Huang, GW; Mei, YJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2004Low-frequency noise in partially depleted SOI MOSFETs operating from linear region to saturation region at various temperaturesChen, KM; Hu, HH; Huang, GW; Yeh, WK; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Impact of hot carrier stress on RF power characteristics of MOSFETsHuang, SY; Chen, KM; Huang, GW; Yang, DY; Chang, CY; Liang, V; Tseng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics