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Issue DateTitleAuthor(s)
2004High performance multi-bit nonvolatile HfO2 nanocrystal memory using spinodal phase separation of hafnium silicateLin, YH; Chien, CH; Lin, CT; Chen, CW; Chang, CY; Lei, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1997A model for photoresist-induced charging damage in ultra-thin gate oxidesLin, HC; Chien, CH; Wang, MF; Huang, TY; Chang, CY; 交大名義發表; 奈米中心; National Chiao Tung University; Nano Facility Center
20052-bit poly-Si-TFT nonvolatile memory using hafnium oxide, hafnium silicate and zirconium silicateLin, YH; Chien, CH; Chou, TH; Chao, TS; Chang, CY; Lei, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2005Impact of post-deposition-annealing on the electrical characteristics of HfOxNy gate dielectric on Ge substrateCheng, CC; Chien, CH; Chen, CW; Hsu, SL; Yang, MY; Huang, CC; Yang, FL; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-1997Suppression of boron penetration in P+-poly-Si gate metal-oxide-semiconductor transistor using nitrogen implantationChao, TS; Chien, CH; Hao, CP; Liaw, MC; Chu, CH; Chang, CY; Lei, TF; Sun, WT; Hsu, CH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-1997The role of a resist during O-2 plasma ashing and its impact on the reliability evaluation of ultrathin gate oxidesChien, CH; Chang, CY; Lin, HC; Chang, TF; Hsien, SK; Tseng, HC; Chiou, SG; Huang, TY; 交大名義發表; 奈米中心; National Chiao Tung University; Nano Facility Center
22-Dec-2004High-density MIM capacitors with HfO(2) dielectricsPerng, TH; Chien, CH; Chen, CW; Lehnen, P; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-2006Annealing temperature effect on the performance of nonvolatile HfO2Si-oxide-nitride-oxide-silicon-type flash memoryLin, YH; Chien, CH; Chang, CY; Lei, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2002Process-related reliability issues toward sub-100 nm device regimeChang, CY; Chao, TS; Lin, HC; Chien, CH; 交大名義發表; National Chiao Tung University
2000Improved plasma charging immunity in ultra-thin gate oxide with fluorine and nitrogen implantationChen, CC; Lin, HC; Chang, CY; Huang, CC; Chien, CH; Huang, TY; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics