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Issue DateTitleAuthor(s)
1996Thermal stability and interaction between SiOF and Cu filmMei, YJ; Chang, TC; Sheu, JD; Yeh, WK; Pan, FM; Chang, CY; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
1996Anomalous selective tungsten growth by chemical vapor depositionMei, YJ; Chang, TC; Sheu, JD; Yeh, WK; Pan, FM; Chang, CY; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
1-Feb-1996Light emission from the porous boron delta-doped Si superlatticeChang, TC; Yeh, WK; Hsu, MY; Chang, CY; Lee, CP; Jung, TG; Tsai, WC; Huang, GW; Mei, YJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Nov-1999The novel precleaning treatment for selective tungsten chemical vapor depositionChang, TC; Mor, YS; Liu, PT; Sze, SM; Yang, YL; Tsai, MS; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-2006High-performance metal-induced lateral-crystallization polysilicon thin-film transistors with multiple nanowire channels and multiple gatesWu, YC; Chang, TC; Liu, PT; Chou, CW; Wu, YC; Tu, CH; Chang, CY; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
24-Feb-2006A novel method for growing polycrystalline Ge layer by using UHVCVDTu, CH; Chang, TC; Liu, PT; Yang, TH; Zan, HW; Chang, CY; 電子工程學系及電子研究所; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Institute of Display
26-Sep-2002Comparison of poly-Si films deposited by UHVCVD and LPCVD and its application for thin film transistorsPeng, DZ; Zan, HW; Shih, PS; Chang, TC; Lin, CW; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
26-Sep-2002A W-spacer GOLD TFT with high performance and high reliabilityZan, HW; Peng, DZ; Shih, PS; Chang, TC; Liu, PT; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2000Study of boron effects on the reaction of Co and Si1-xGex at various temperaturesHuang, HJ; Chen, KM; Chang, CY; Huang, TY; Chang, TC; Chen, LP; Huang, GW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2000Pulsed KrF laser annealing of Mo/Si0.76Ge0.24Luo, JS; Lin, WT; Chang, CY; Shih, PS; Chang, TC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics