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Issue DateTitleAuthor(s)
2000Optimization of short channel effect by arsenic P-Halo implant through polysilicon gate for 0.12uw P-MOSFETChen, C; Chang, CY; Chou, JW; Huang, CT; Lin, KC; Cheng, YC; Lin, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2000New insights on RF CMOS stability related to bias, scaling, and temperatureSu, JG; Wong, SC; Chang, CY; Chiu, KY; Huang, TY; Ou, CT; Kao, CH; Chao, CJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1996Thermal stability and interaction between SiOF and Cu filmMei, YJ; Chang, TC; Sheu, JD; Yeh, WK; Pan, FM; Chang, CY; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
2003Low RF loss and noise of transmission lines on Si substrates using an improved ion implantation processChan, KT; Chin, A; McAlister, SP; Chang, CY; Tseng, C; Liang, V; Chen, JK; Chien, SC; Duh, DS; Lin, WJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistorsHuang, SY; Chen, KM; Huang, GW; Hsu, TL; Tseng, HC; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Characterization on ESD devices with test structures in silicon germanium RF BiCMOS processKer, MD; Wu, WL; Chang, CY; 電機學院; College of Electrical and Computer Engineering
1996Anomalous selective tungsten growth by chemical vapor depositionMei, YJ; Chang, TC; Sheu, JD; Yeh, WK; Pan, FM; Chang, CY; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
2006Characterization and modeling of RF MOSFETs under hot carrier stress and oxide breakdownHuang, SY; Chen, KM; Huang, GW; Yang, DY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004High performance multi-bit nonvolatile HfO2 nanocrystal memory using spinodal phase separation of hafnium silicateLin, YH; Chien, CH; Lin, CT; Chen, CW; Chang, CY; Lei, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Bandpass filters with resistive attenuators being located at 2(nd) and 4(nd) spurious pass-bandsHsieh, MY; Wang, SM; Chang, CY; 電信工程研究所; Institute of Communications Engineering