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Issue DateTitleAuthor(s)
1-Jul-2000Study of boron effects on the reaction of Co and Si1-xGex at various temperaturesHuang, HJ; Chen, KM; Chang, CY; Huang, TY; Chang, TC; Chen, LP; Huang, GW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2000Pulsed KrF laser annealing of Mo/Si0.76Ge0.24Luo, JS; Lin, WT; Chang, CY; Shih, PS; Chang, TC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2000Interfacial reactions of Ni/Si0.76Ge0.24 and Ni/Si1-x-yGexCy by vacuum annealing and pulsed KrF laser annealingLuo, JS; Lin, WT; Chang, CY; Shih, PS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-2000Copper electroplating for future ultralarge scale integration interconnectionGau, WC; Chang, TC; Lin, YS; Hu, JC; Chen, LJ; Chang, CY; Cheng, CL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2000Effects of O-2 plasma treatment on the electric and dielectric characteristics of Ba0.7Sr0.3TiO3 thin filmsLeu, CC; Chan, SH; Chen, HY; Horng, RH; Wuu, DS; Wu, LH; Huang, TY; Chang, CY; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2000Deposition of polycrystalline Si and SiGe by ultra-high vacuum chemical molecular epitaxyChen, KM; Huang, HJ; Chang, CY; Chen, LP; Huang, GW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-2000Dimensional effects on the reliability of polycrystalline silicon thin-film transistorsZan, HW; Shih, PS; Chang, TC; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-2000Reliability of passivated P-type polycrystalline silicon thin film transistorsPeng, DZ; Shin, PS; Chang, TC; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-1998A novel fabrication technique of T-shaped gates using an EGMEA and PMIPK multilayer resist system and a single-step electron-beam exposureLai, YL; Lai, YK; Chang, CY; Chang, EY; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Mar-1997Suppression of boron penetration in P+-poly-Si gate metal-oxide-semiconductor transistor using nitrogen implantationChao, TS; Chien, CH; Hao, CP; Liaw, MC; Chu, CH; Chang, CY; Lei, TF; Sun, WT; Hsu, CH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics