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Issue DateTitleAuthor(s)
2003Layout design of high-quality SOI varactorChen, HY; Chen, KM; Huang, GW; Huang, CH; Yang, TH; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2000Characterization of NH3 plasma-treated Ba0.7Sr0.3TiO3 thin filmsWuu, DS; Horng, RH; Liao, FC; Leu, CC; Huang, TY; Sze, SM; Chen, HY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-1998Interfacial reactions of Ni on Si0.76Ge0.24 and Si by pulsed laser annealingLuo, JS; Lin, WT; Chang, CY; Tsai, WC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-1997Investigation of the indium atom interdiffusion on the growth of GaN/InGaN heterostructuresTsang, JS; Guo, JD; Chan, SH; Feng, MS; Chang, CY; 交大名義發表; National Chiao Tung University
1-Feb-1996Light emission from the porous boron delta-doped Si superlatticeChang, TC; Yeh, WK; Hsu, MY; Chang, CY; Lee, CP; Jung, TG; Tsai, WC; Huang, GW; Mei, YJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Nov-1999The novel precleaning treatment for selective tungsten chemical vapor depositionChang, TC; Mor, YS; Liu, PT; Sze, SM; Yang, YL; Tsai, MS; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1997A model for photoresist-induced charging damage in ultra-thin gate oxidesLin, HC; Chien, CH; Wang, MF; Huang, TY; Chang, CY; 交大名義發表; 奈米中心; National Chiao Tung University; Nano Facility Center
1-Dec-1996A simple fabrication process of T-shaped gates using a deep-UV/electron-beam/deep-UV tri-layer resist system and electron-beam lithographyLai, YL; Chang, EY; Chang, CY; Yang, HPD; Nakamura, K; Shy, SL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-1997High-power-density and high-efficiency atomic-planar-doped AlGaAs/InGaAs quantum-well power high-electron-mobility transistors for 2.4 V medium-power wireless communication applicationsLai, YL; Chang, EY; Chang, CY; Liu, TH; Wang, SP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-2005RF MOSFET characterization by four-port measurementWu, SD; Huang, GW; Chen, KM; Tseng, HC; Hsu, TL; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics