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Issue DateTitleAuthor(s)
2006Near-infrared electroluminescence of furnace or CO2 laser annealed si-rich SiO2 with structural defects and Si nanocrystalsLin, Gong-Ru; Lin, Chun-Jung; 光電工程學系; Department of Photonics
2015Optical Study of Multiple-layered Colloidal Quantum DotsChen, Yin-Han; Hsu, Shun-Chieh; Lin, Shih-Li; Chen, Teng-Ming; Lin, Chien-Chung; 光電系統研究所; 照明與能源光電研究所; 應用化學系; Institute of Photonic System; Institute of Lighting and Energy Photonics; Department of Applied Chemistry
25-Jan-2006Quaternary AlInGaN multiple quantum well 368 nm light-emitting diodeWang, TC; Kuo, HC; Lee, ZH; Chuo, CC; Tsai, MY; Tsai, CE; Lee, TD; Lu, TC; Chi, J; 光電工程學系; Department of Photonics
1-Mar-1997Investigation of the indium atom interdiffusion on the growth of GaN/InGaN heterostructuresTsang, JS; Guo, JD; Chan, SH; Feng, MS; Chang, CY; 交大名義發表; National Chiao Tung University
1999Atomic force microscope study of GaN films grown by hydride vapor phase epitaxyFang, HM; Wang, YK; Tsai, RY; Chu, CF; Wang, SC; 光電工程學系; Department of Photonics
2012Characterization of large area Cu(In,Ga)Se-2 nanotip arrays via photoluminescenceLiao, Yu-Kuang; Lin, Woei-Tyng; Hsieh, Dan-Hua; Kuo, Shou-Yi; Lai, Fang-I; Chueh, Yu-Lun; Kuo, Hao-Chung; 電子物理學系; Department of Electrophysics
2003The blue-green luminescence and current-voltage characteristics of MOS diode made on thermally annealed Si+ implanted SiO2 substrateLin, GR; Lin, CJ; 光電工程學系; Department of Photonics
1-Dec-2001Investigation of electron-optical phonon interactions in moderate wide InxGa1-xAs/GaAs strained quantum wellsLin, SD; Lee, HC; Sun, KW; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2008Optical characterization of ZnMnO thin films on c-Al2O3Lin, H. J.; Lin, D. Y.; Wu, J. S.; Chou, W. C.; Yang, C. S.; Wang, J. S.; Lo, W. H.; 電子物理學系; Department of Electrophysics
2008Abnormal PL spectrum in InGaN MQW surface emitting cavity - art. no. 69080LChu, J. T.; Cheng, Y. -J.; Kuo, H. C.; Lu, T. C.; Wang, S. C.; 光電工程學系; Department of Photonics