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Issue DateTitleAuthor(s)
2015ENGINEERED THRESHOLD VOLTAGE IN ALGAN/GAN HEMTS FOR NORMALLY-OFF OPERATIONTsai, Jung-Ruey; Chang, Yi-Sheng; Wei, Kuo-Shu; Wen, Ting-Ting; 奈米中心; Nano Facility Center
2014Effect of Thermal Annealing on a-plane GaN Grown on r-plane SapphireKo, Tsung-Shine; Lu, Tien-Chang; Chen, Jung-Ron; Ou, Sin-Liang; Chang, Chia-Ming; Kuo, Hau-Chung; Lin, Der-Yuh; 光電工程學系; Department of Photonics
2012Recent advances on CW current injection blue VCSELsWang, Shing-Chung; Lu, Tien-Chang; Kuo, Hao-Chung; 光電工程學系; Department of Photonics
1-Apr-2006Fabrication and characteristics of GaN-based microcavity light-emitting diodes with high reflectivity AIN/GaN distributed Bragg reflectorsPeng, YC; Kao, CC; Huang, HW; Chu, JT; Lu, TC; Kuo, HC; Wang, SC; Yu, CC; 光電工程學系; Department of Photonics
1999Atomic force microscope study of GaN films grown by hydride vapor phase epitaxyFang, HM; Wang, YK; Tsai, RY; Chu, CF; Wang, SC; 光電工程學系; Department of Photonics
1-Jan-2014The effects of Growth Parameters on the Electrical Properties in InAlN/AlN/GaN High-Electron-Mobility Transistors (HEMTs)Huang, Wei-Ching; Wong, Yuen-Yee; Liu, Kuan-Shin; Hsieh, Chi-Feng; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
1-May-2009Effective reduction of bowing in free-standing GaN by N-face regrowth with hydride vapor-phase epitaxyChen, Kuei-Ming; Huang, Hsin-Hsiung; Kuo, Yi-Lin; Wu, Pei-Lun; Chu, Ting-Li; Yu, Hung-Wei; Lee, Wei-I; 電子物理學系; Department of Electrophysics
22-May-2001High etching rate of GaN films by KrF excimer laserChu, CF; Lee, CK; Yu, CC; Wang, YK; Tasi, JY; Yang, CR; Wang, SC; 光電工程學系; Department of Photonics
2014GaN-based surface-emitting lasers using high contrast gratingLu, Tien-Chang; Wang, Shing-Chung; Wu, Tzeng-Tsong; Wu, Shu-Hsien; Syu, Yu-Cheng; 光電工程學系; Department of Photonics
2008Abnormal PL spectrum in InGaN MQW surface emitting cavity - art. no. 69080LChu, J. T.; Cheng, Y. -J.; Kuo, H. C.; Lu, T. C.; Wang, S. C.; 光電工程學系; Department of Photonics