標題: Composition determination of semiconductor quantum wires by X-ray scattering
作者: Hsu, CH
Tang, MT
Lee, HY
Huang, CM
Liang, KS
Lin, SD
Lin, ZC
Lee, CP
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: X-ray scattering;quantum wires
公開日期: 28-二月-2005
摘要: Self-assembled semiconductor nano-structures, e.g. quantum dots and wires, have recently attracted intensive interests due to their potential applications in optoelectronic industry. Strain field, compositional profile, size, and shape are the key factors determining the physical properties of these nano-structures. However, due to their mesoscopic size, it is a challenge to accurately determine those geometric and chemical parameters. In this work, we present the structural and compositional investigation of GaAs quantum wires grown on InP(0 0 1) substrates by grazing incidence X-ray scattering. In particular, we applied resonant X-ray scattering to determine the compositional distribution within the wires. With properly chosen diffraction peak and X-ray energy range, the profile of energy scan is highly sensitive to the composition of the region with selected lattice constant. As compared to other composition determination methods, which rely on the intensity ratio either between a strong and a weak diffraction or between the same Bragg diffraction collected at different energies, the profile of energy scan is not affected by the significant intensity modulation introduced by inter-wire correlation. Therefore, this method can be applied to systems of various surface morphologies and ordered structures and still provides compositional information with high accuracy and good resolution. (C) 2004 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.physb.2004.11.008
http://hdl.handle.net/11536/13993
ISSN: 0921-4526
DOI: 10.1016/j.physb.2004.11.008
期刊: PHYSICA B-CONDENSED MATTER
Volume: 357
Issue: 1-2
起始頁: 6
結束頁: 10
顯示於類別:會議論文


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  1. 000227309100003.pdf