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dc.contributor.authorLi, YMen_US
dc.contributor.authorYu, SMen_US
dc.date.accessioned2014-12-08T15:19:39Z-
dc.date.available2014-12-08T15:19:39Z-
dc.date.issued2005-03-01en_US
dc.identifier.issn0377-0427en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.cam.2004.06.001en_US
dc.identifier.urihttp://hdl.handle.net/11536/13968-
dc.description.abstractWe propose in this paper a quantum correction transport model for nanoscale double-gate metal-oxide-semiconductor field effect transistor (MOSFET) device simulation. Based on adaptive finite volume, parallel domain decomposition, monotone iterative, and a posteriori error estimation methods, the model is solved numerically on a PC-based Linux cluster with MPI libraries. Quantum mechanical effect plays an important role in semiconductor nanoscale device simulation. To model this effect. a physical-based quantum correction equation is derived and solved with the hydrodynamic transport model. Numerical calculation of the quantum correction transport model is implemented with the parallel adaptive finite volume method which has recently been proposed by us in deep-submicron semiconductor device simulation. A 20 nm double-gate MOSFET is simulated with the developed quantum transport model and computational technique. Compared with a classical transport model. it is found that this model can account for the quantum mechanical effects of the nanoscale double-gate MOSFET quantitatively. Various biasing conditions have been verified on the simulated device to demonstrate its accuracy. Furthermore. for the same tested problem, the parallel adaptive computation shows very good computational performance in terms of the mesh refinements, the parallel speedup, the load-balancing, and the efficiency. (C) 2004 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectparallel algorithmen_US
dc.subjectdomain decompositionen_US
dc.subjectadaptive computational methoden_US
dc.subjectsemiconductor device simulationen_US
dc.subjectquantum correction modelen_US
dc.subjectnanoscale deviceen_US
dc.subjectdouble-gate MOSFETsen_US
dc.titleA parallel adaptive finite volume method for nanoscale double-gate MOSFETs simulationen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.cam.2004.06.001en_US
dc.identifier.journalJOURNAL OF COMPUTATIONAL AND APPLIED MATHEMATICSen_US
dc.citation.volume175en_US
dc.citation.issue1en_US
dc.citation.spage87en_US
dc.citation.epage99en_US
dc.contributor.department友訊交大聯合研發中心zh_TW
dc.contributor.departmentD Link NCTU Joint Res Ctren_US
dc.identifier.wosnumberWOS:000225746700008-
Appears in Collections:Conferences Paper


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