標題: High-perfomance nonvolatile HfO2 nanocrystal memory
作者: Lin, YH
Chien, CH
Lin, CT
Chang, CY
Lei, TF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: hafnium oxide;nanocrystals;nonvolatile memories;phase separation
公開日期: 1-三月-2005
摘要: In this letter, we demonstrate high-performance nonvolatile HfO2 nanocrystal memory utilizing spinodal phase separation of Hf-silicate thin film by 900 degreesC rapid thermal annealing. With this technique. a remarkably high nanocrystal density of as high as 0.9 similar to 1.9 X 10(12) cm(-2) with an average size < 10 nm can be easily achieved. Because HfO2 nanocrystals are well embedded inside an SiO2-rich matrix and due to their sufficiently deep energy level, we, for the first time, have demonstrated superior characteristics of the nanocrystal memories in terms of a considerably large memory window, high-speed program/erase (P/E) (1 mus/0.1 ms), long retention time greater than 10(8) s for 10 % charge loss, and excellent endurance after 10(6) P/E cycles.
URI: http://dx.doi.org/10.1109/LED.2004.842727
http://hdl.handle.net/11536/13955
ISSN: 0741-3106
DOI: 10.1109/LED.2004.842727
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 26
Issue: 3
起始頁: 154
結束頁: 156
顯示於類別:期刊論文


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  1. 000227262500010.pdf