Title: InAs/GaAs quantum-dot saturable absorbers for diode-pumped passively Q-switched Nd-doped 1.3-mu m lasers
Authors: Lai, HC
Li, A
Su, KW
Ku, ML
Chen, YF
Huang, KF
Department of Electrophysics
Issue Date: 1-Mar-2005
Abstract: Received August 6, 2004 A low-loss semiconductor saturable absorber based on InAs/GaAs quantum dots was developed for Q switching of a diode-pumped Nd-doped laser operating at 1.3 mum. With an InAs/GaAs quantum-dot saturable absorber, a diode-pumped Nd:YVO4 laser at 1342 nm. was achieved. With an incident pump power of 2.2 W, an average output power of 360 mW with a Q-switched pulse width of 90 ns at a pulse repetition rate of 770 kHz was obtained. (C) 2005 Optical Society of America
URI: http://dx.doi.org/10.1364/OL.30.000480
ISSN: 0146-9592
DOI: 10.1364/OL.30.000480
Volume: 30
Issue: 5
Begin Page: 480
End Page: 482
Appears in Collections:Articles