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dc.contributor.author楊宇翔zh_TW
dc.contributor.author汪大暉zh_TW
dc.contributor.author陳旻政zh_TW
dc.contributor.authorYang, Yu-Siangen_US
dc.contributor.authorWang, Tahuien_US
dc.contributor.authorChen, Min-Chengen_US
dc.date.accessioned2018-01-24T07:38:02Z-
dc.date.available2018-01-24T07:38:02Z-
dc.date.issued2016en_US
dc.identifier.urihttp://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070350110en_US
dc.identifier.urihttp://hdl.handle.net/11536/139456-
dc.description.abstract在本篇論文中,我們建立氮化矽快閃記憶中氮化矽層電荷橫向移動的數值模型,透過我們建立的模型比較不同橫向傳導機制中的差異,以及利用Sentaurus TCAD模擬比較平面式 NOR-type SONOS和閘極環繞式(Gate-All-Around) NAND string 中氮化矽層中橫向電場差異,並分別用不同機制模擬電荷在平面式NOR-type SONOS和閘極環繞式(Gate-All-Around) NAND string 的氮化矽層中橫向移動之情形,藉以分析電荷在氮化矽層中可能的移動機制。zh_TW
dc.description.abstractIn this thesis, we developed the model of charge lateral migration in SONOS flash memory. According to our model, we can compare the difference conduction mechanism in lateral direction. We also use Sentaurus TCAD to compare the nitride lateral electric field difference between NOR-type SONOS and gate-all-around NAND string. Then we use our model to simulate the charge lateral migration in NOR-type SONOS and gate-all-around NAND string, and analyze the possible conduction mechanism in silicon nitride.en_US
dc.language.isoen_USen_US
dc.subject數值模擬zh_TW
dc.subject氮化矽快閃記憶體zh_TW
dc.subject橫向電場zh_TW
dc.subjectNumerical Simulationen_US
dc.subjectSONOSen_US
dc.subjectLateral Electric Fielden_US
dc.title氮化矽快閃記憶體的橫向電場引致內部儲存電荷傳輸之數值模擬zh_TW
dc.titleNumerical Simulation of Lateral Electric Field Induced Nitride Trapped Charge Movement in SONOSen_US
dc.typeThesisen_US
dc.contributor.department電子研究所zh_TW
Appears in Collections:Thesis