標題: Photoluminescence from In0.3Ga0.7N/GaN multiple-quantum-well nanorods
作者: Hsueh, TH
Huang, HW
Lai, FI
Sheu, JK
Chang, YH
Kuo, HC
Wang, SC
光電工程學系
Department of Photonics
公開日期: 1-四月-2005
摘要: The fabrication of ln(0.3)Ga(0.7)N/GaN multiple-quantum-well nanorods with diameters of 60-100 nm and their optical characteristics performed by micro-photoluminescence measurements are presented. The nanorods were fabricated by inductively coupled plasma dry etching from a light-emitting diode wafer. The structure and surface properties of fabricated nanorods were verified by the field emission scanning electron microscopy and the transmission electron microscopy. The photoluminescence (PL) spectra with sharp linewidths of typically 1.5 nm were observed at 4 K. The excitation-power-dependent spectra show that no energy shift was observed for these sharp peaks. Moreover, increasing the excitation power instead leads to an occurrence of new, sharp PL peaks at the higher energy tail of the PL spectra, which suggest that excitons are strongly confined in quantum-dot-like regions or localization centres.
URI: http://dx.doi.org/10.1088/0957-4484/16/4/020
http://hdl.handle.net/11536/13871
ISSN: 0957-4484
DOI: 10.1088/0957-4484/16/4/020
期刊: NANOTECHNOLOGY
Volume: 16
Issue: 4
起始頁: 448
結束頁: 450
顯示於類別:期刊論文


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  1. 000228949300029.pdf