標題: Characterization of InGaN/GaN multiple quantum well nanorods fabricated by plasma etching with self-assembled nickel metal nanomasks
作者: Hsueh, TH
Huang, HW
Kao, CC
Chang, YH
Ou-Yang, MC
Kuo, HC
Wang, SC
光電工程學系
Department of Photonics
關鍵字: gallium nitride (GaN);nanorods;inductively coupled plasma (ICP)
公開日期: 1-Apr-2005
摘要: High-density (3.0 x 1010 cm (-2)) InGaN/GaN Multiple quantum well (MQW) nanorods were fabricated from an as-grown bulk light-emitting diode structure by inductively coupled plasma dry etching with self-assembled nickel metal nanomasks. The self-assembled nickel metal nanomasks were formed by rapid thermal annealing of a nickel metal film at 850 degrees C for 1 min. The influence of the thicknesses of the Ni metal film on the dimensions and density of the nanorods was also investigated. The structural and optical properties of the InGaN/GaN MQW nanorods were established using field emission scanning electron microscopy, transmission electron microscopy and photoluminescence measurements. The diameters and heights of nanorods were estimated to be 60 to 100nm and more than 0.28 mu m, respectively. The peak emission wavelength of the nanorods showed a blue shift of 5.1 nm from that of the as-grown bulk. An enhancement by a factor of 5 in photoluminescence intensity of the nanorods compared with that of the as-grown bulk was observed. The blue shift is attributed to strain relaxation in the wells after dry etching, the quantum confinement effect, or a combination of the two, which results in the enhancement of emission intensity.
URI: http://dx.doi.org/10.1143/JJAP.44.2661
http://hdl.handle.net/11536/13849
ISSN: 0021-4922
DOI: 10.1143/JJAP.44.2661
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 44
Issue: 4B
起始頁: 2661
結束頁: 2663
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