標題: Fabrication and micro-photoluminescence investigation of Mg-doped gallium nitride nanorods
作者: Chang, YH
Hsueh, TH
Lai, FI
Chang, CW
Yu, CC
Huang, HW
Lin, CF
Kuo, HC
Wang, SC
光電工程學系
Department of Photonics
關鍵字: GaN;nanorod;inductively coupled plasma;micro-photoluminescence;nanostructure
公開日期: 1-Apr-2005
摘要: High-density magnesium (Mg)-doped gallium nitride (GaN) nanorods were fabricated by inductively coupled plasma reactive ion etching from a GaN film and had a mean length of approximately 50nm. A large blue-shift was observed in the photoluminescence (PL) peak energy of Mg-doped GaN nanorods under HeCd laser (325 nm) excitation. The PL spectra of the nanorods show a typical donor-acceptor-pair (DAP) emission at approximately 3.0 eV with a large blue-shift compared to that of the Mg-doped GaN film. The blue-shift energy increases from 8 meV to 67 meV as the excitation intensity varies from 12 kW/cm(2) to 56 kW/cm(2). Possible reasons for the power dependence of the spectral shift in the PL emission energy are discussed.
URI: http://dx.doi.org/10.1143/JJAP.44.2657
http://hdl.handle.net/11536/13848
ISSN: 0021-4922
DOI: 10.1143/JJAP.44.2657
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 44
Issue: 4B
起始頁: 2657
結束頁: 2660
Appears in Collections:Articles


Files in This Item:

  1. 000229095700127.pdf