標題: 10 Gbps InGaAs : Sb-G-aAs-GaAsP quantum well vertical cavity surface emitting lasers with 1.27 mu m emission wavelengths
作者: Chang, YH
Kuo, HC
Chang, YA
Chu, JT
Tsai, MY
Wang, SC
光電工程學系
Department of Photonics
關鍵字: metal-organic chemical vapor deposition;laser diodes;optical fiber devices;semiconducting;InGaAsSb;characterization
公開日期: 1-四月-2005
摘要: InGaAs:Sb-GaAs-GaAsP vertical cavity surface emitting lasers (VCSELs) with 1.27 mu m emission wavelength were grown by metal-organic chemical vapor deposition (MOCVD) and exhibited excellent performance and temperature stability. The threshold current changes from 1.8 to 1.1 mA and the slope efficiency falls less than similar to 35% as the temperature is increased from room temperature to 70 degrees C. With a bias current of only 5 mA, the 3 dB modulation frequency response was measured to be 8.36GHz, which is appropriate for 10Gb/s operation. The maximal bandwidth is measured to be 10.7GHz With a modulation current efficiency factor (MCEF) of similar to 5.25 GHz/(mA) 1/2. Bit error rates of less than 10(-12) are demonstrated for 10 Gb/s data transmission from 25 degrees C to 70'C. We also accumulated life test data up to 1000 h at 70 degrees C/10 mA.
URI: http://dx.doi.org/10.1143/JJAP.44.2556
http://hdl.handle.net/11536/13844
ISSN: 0021-4922
DOI: 10.1143/JJAP.44.2556
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 44
Issue: 4B
起始頁: 2556
結束頁: 2559
顯示於類別:期刊論文


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