|標題:||Reverse CoSi(2) thermal stability and digitized sheet resistance increase of sub-90 nm polysilicon lines|
Department of Materials Science and Engineering
|關鍵字:||cobalt silicide;thermal stability;agglomeration;transmission electron microscopy (TEM);sheet resistance (Rs);polysilicon|
|摘要:||An equation for quantifying the CoSi(2) thermal stability of polysilicon lines ranging from 50 nm to 2 mu m is proposed for the first time. In contrast to the intuitive thinking of narrower lines having a worse thermal stability, the equation predicts the weakest thermal stability occurring at the super nominal line in 90nm technology. An interesting phenomenon of digitized resistance increase is also reported for the first time.|
|期刊:||JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS|
|Appears in Collections:||Articles|
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