標題: High-performance An/Ti/Ge/Pd ohmic contacts on n-Type In0.5Ga0.5P
作者: Chai, CY
Wu, JW
Guo, JD
Huang, JA
Lai, YL
Chan, SH
Chang, CY
Chan, YJ
Cheng, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Au/Ti/Ge/Pd;ohmic contact;n-type In0.5Ga0.5P;LP-MOCVD
公開日期: 1-四月-1996
摘要: High-performance Au/Ti/Ge/Pd ohmic contacts on n(+)-In0.5Ga0.5P have been fabricated for the first time. Using an n(+)-In0.5Ga0.5P epitaxial layer grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) with a Si dopant concentration of about 2 x 10(18) cm(-3), the minimum specific contact resistivity is as low as 1.2 x 10(-5) Ohm . cm(2), which is much lower than that of AuGeNi contacts after rapid thermal annealing at 400 degrees C for 60 s. The thermal stability of the Au/Ti/Ge/Pd system is significantly higher than that of conventional AuGeNi due to the introduction of the Ti barrier layer. Many holes and islands are observed on the surfaces of samples annealed at high temperature. The outdiffusion of P from the decomposed In0.5Ga0.5P substrate and agglomeration of Pd and Ge are the primary causes of contact degradation.
URI: http://dx.doi.org/10.1143/JJAP.35.2073
http://hdl.handle.net/11536/1384
ISSN: 0021-4922
DOI: 10.1143/JJAP.35.2073
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 35
Issue: 4A
起始頁: 2073
結束頁: 2076
顯示於類別:期刊論文


文件中的檔案:

  1. A1996UQ18800015.pdf