標題: Characterization of self-assembled InAs quantum dots with InAlAs/InGaAs strain-reduced layers by photoluminescence spectroscopy
作者: Chang, KP
Yang, SL
Chuu, DS
Hsiao, RS
Chen, JF
Wei, L
Wang, JS
Chi, JY
電子物理學系
Department of Electrophysics
公開日期: 15-Apr-2005
摘要: The optoelectronic characteristics of self-assembled InAs quantum dots (QDs) with strain-reduced layers (SRLs) were investigated using photoluminescence (PL) spectroscopy. Various SRLs that combine In0.14Al0.86As and In0.14Ga0.86As with the same total thickness were examined to ascertain their confining effect on carriers in InAs QDs. The emission wavelength is blueshifted as the thickness of InAlAs is increased. The energy separation between the ground state and the first excited state of QDs with InAlAs SRLs greatly exceeds that of QDs with InGaAs SRLs. Atomic force microscopic images and PL spectra of the QD samples demonstrated that high-quality InAs QDs with long emission wavelengths and a large energy separation can be generated by growing a low-temperature, thin InAlAs SRL onto self-assembled QDs. (C) 2005 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1886278
http://hdl.handle.net/11536/13811
ISSN: 0021-8979
DOI: 10.1063/1.1886278
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 97
Issue: 8
結束頁: 
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