標題: A 0.18-mu m CMOS CMFB downconversion micromixer with deep N-well technology for LO-RF and LO-IF isolation improvements
作者: Meng, CC
Hsu, SK
Wu, TH
Huang, GW
電信工程研究所
Institute of Communications Engineering
關鍵字: CMOS;CMFB;mixer;deep N-well
公開日期: 20-四月-2005
摘要: CMOS deep N-well technology can eliminate the physical effects of NMOS transistors and reduce substrate noise and coupling in order to reach the NMOS channel. These properties result in better LO-IF and LO-RF isolations in a Gilbert micromixer. Two identical 0.18-mu m CMOS downconversion micromixers (except at the RF input stage) with deep N-well or without deep N-well are fabricated in adjacent areas of the same wafer for the purpose of isolation comparison. A -37-dB LO-IF and -38-dB LO-RF isolation downconversion micromixer with 19-dB conversion gain and IP1dB = -20 dBm and IIP3 = -13 dBm when RF = 2.4 GHz and LO = 2.25 GHz is demonstrated here using 0.18-mu m-deep N-well CMOS technology. On the other hand, a downconversion micromixer without deep N-well has almost identical power performance but achieves only -20-dB LO-IF isolation and -21-dB LO-RF isolation. (c) 2005 Wiley Periodicals, Inc.
URI: http://dx.doi.org/10.1002/mop.20759
http://hdl.handle.net/11536/13806
ISSN: 0895-2477
DOI: 10.1002/mop.20759
期刊: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
Volume: 45
Issue: 2
起始頁: 168
結束頁: 170
顯示於類別:期刊論文


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  1. 000227909900026.pdf