標題: High-performance 30-period quantum-dot infrared photodetector
作者: Chou, ST
Lin, SY
Hsiao, RS
Chi, JY
Wang, JS
Wu, MC
Chen, JF
電子物理學系
Department of Electrophysics
公開日期: 1-五月-2005
摘要: In this article, quantum-dot infrared photodetectors (QDIPs) with 10- and 30-period InAs/GaAs quantum-dot structures are investigated. High responsivity of 2.37 A/W and detectivity of 2.48 X 10(10) cm Hz(1/2)/W for 30-period QDIPs under 10 K are observed at -2.7 and 1.2 V, respectively. Almost symmetric photocurrents and dark currents under positive and negative biases are observed for both devices, which indicate a minor influence of the wetting layer on the performance of QDIPs. Lower dark current and increased photocurrent for the 30-period QDIPs would predict a better performance for devices with over a 30-period QD structure. (c) 2005 American Vacuum Society.
URI: http://dx.doi.org/10.1116/1.1900730
http://hdl.handle.net/11536/13796
ISSN: 1071-1023
DOI: 10.1116/1.1900730
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 23
Issue: 3
起始頁: 1129
結束頁: 1131
顯示於類別:會議論文


文件中的檔案:

  1. 000230479600044.pdf