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dc.contributor.authorChiu, SYen_US
dc.contributor.authorWang, YLen_US
dc.contributor.authorChang, SCen_US
dc.contributor.authorFeng, MSen_US
dc.date.accessioned2014-12-08T15:19:18Z-
dc.date.available2014-12-08T15:19:18Z-
dc.date.issued2005-05-01en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2004.11.187en_US
dc.identifier.urihttp://hdl.handle.net/11536/13786-
dc.description.abstractIn this study, an effective seeding technology, plasma immersion ion implantation of palladium (PIII Pd), was proposed to achieve defect-free gap filling for copper electroplating (Cu-ECP). It was found that a threshold dosage (similar to 5.2 x 10(18) m(-2)) of PIII I'd was required to drive Cu-ECP and the dependence of Pd dosage on the implantation time was quasi-linear. The thickness of electroplated copper films increased as the Pd dosage increased. Too high a Pd dosage caused a rough copper film with high resistivity (> 10 mu Omega cm) while too low a I'd dosage resulted in an insufficient nucleation site for Cu-ECP, leading to poor film adhesion. In addition, a higher substrate bias of PIII was suggested to enhance the gap-filling capability of Cu-ECP and the Cu(111) formation of electroplated copper films. (c) 2004 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectplasma immersion ion implantation (PIII)en_US
dc.subjectpalladiumen_US
dc.subjectseed layeren_US
dc.subjectcopperen_US
dc.subjectelectroplatingen_US
dc.titleAplication of plasma immersion ion implantation on seeding copper electroplating for multilevel interconnectionen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.tsf.2004.11.187en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume478en_US
dc.citation.issue1-2en_US
dc.citation.spage293en_US
dc.citation.epage298en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000228039800049-
dc.citation.woscount2-
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