標題: Aplication of plasma immersion ion implantation on seeding copper electroplating for multilevel interconnection
作者: Chiu, SY
Wang, YL
Chang, SC
Feng, MS
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: plasma immersion ion implantation (PIII);palladium;seed layer;copper;electroplating
公開日期: 1-May-2005
摘要: In this study, an effective seeding technology, plasma immersion ion implantation of palladium (PIII Pd), was proposed to achieve defect-free gap filling for copper electroplating (Cu-ECP). It was found that a threshold dosage (similar to 5.2 x 10(18) m(-2)) of PIII I'd was required to drive Cu-ECP and the dependence of Pd dosage on the implantation time was quasi-linear. The thickness of electroplated copper films increased as the Pd dosage increased. Too high a Pd dosage caused a rough copper film with high resistivity (> 10 mu Omega cm) while too low a I'd dosage resulted in an insufficient nucleation site for Cu-ECP, leading to poor film adhesion. In addition, a higher substrate bias of PIII was suggested to enhance the gap-filling capability of Cu-ECP and the Cu(111) formation of electroplated copper films. (c) 2004 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2004.11.187
http://hdl.handle.net/11536/13786
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2004.11.187
期刊: THIN SOLID FILMS
Volume: 478
Issue: 1-2
起始頁: 293
結束頁: 298
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