Title: Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surface
Authors: Huang, HW
Kao, CC
Chu, JI
Kuo, HC
Wang, SC
Yu, CC
Department of Photonics
Keywords: gallium nitride (GaN);light-emitting diode (LED);nano-mask;nickel
Issue Date: 1-May-2005
Abstract: This investigation describes the development of InGaN-GaN light-emitting diode (LED) with a nano-roughened top p-GaN surface which uses Ni nano-mask and wet etching. The light output of the InGaN-GaN LED with a nano-roughened top p-GaN surface is 1.4 times that of a conventional LED, and wall-plug efficiency is 45% higher. The operating voltage of InGaN-GaN LED was reduced from 3.65 to 3.5 V at 20 mA and the series resistance was reduced by 20%. The light output is increased by the nano-roughening of the top p-GaN surface. The reduction in the series resistance can be attributed to the increase in the contact area of nano-roughened surface.
URI: http://dx.doi.org/10.1109/LPT.2005.846741
ISSN: 1041-1135
DOI: 10.1109/LPT.2005.846741
Volume: 17
Issue: 5
Begin Page: 983
End Page: 985
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