標題: Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surface
作者: Huang, HW
Kao, CC
Chu, JI
Kuo, HC
Wang, SC
Yu, CC
光電工程學系
Department of Photonics
關鍵字: gallium nitride (GaN);light-emitting diode (LED);nano-mask;nickel
公開日期: 1-五月-2005
摘要: This investigation describes the development of InGaN-GaN light-emitting diode (LED) with a nano-roughened top p-GaN surface which uses Ni nano-mask and wet etching. The light output of the InGaN-GaN LED with a nano-roughened top p-GaN surface is 1.4 times that of a conventional LED, and wall-plug efficiency is 45% higher. The operating voltage of InGaN-GaN LED was reduced from 3.65 to 3.5 V at 20 mA and the series resistance was reduced by 20%. The light output is increased by the nano-roughening of the top p-GaN surface. The reduction in the series resistance can be attributed to the increase in the contact area of nano-roughened surface.
URI: http://dx.doi.org/10.1109/LPT.2005.846741
http://hdl.handle.net/11536/13771
ISSN: 1041-1135
DOI: 10.1109/LPT.2005.846741
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 17
Issue: 5
起始頁: 983
結束頁: 985
顯示於類別:期刊論文


文件中的檔案:

  1. 000228567300017.pdf