標題: Influence of dislocation density on photoluminescence intensity of GaN
作者: Falth, JF
Gurusinghe, MN
Liu, XY
Andersson, TG
Ivanov, IG
Monemar, B
Yao, HH
Wang, SC
光電工程學系
Department of Photonics
關鍵字: molecular beam epitaxy;nitrides;defects;photoluminescence;capacitance-voltage measurement;atomic force microscopy
公開日期: 1-May-2005
摘要: The influence of dislocation density on photoluminescence intensity is investigated experimentally and compared to a model. GaN samples were grown by molecular beam epitaxy and metal-organic chemical vapour deposition. Different growth parameters and thicknesses of the layers resulted in different dislocation densities. The threading dislocation density, measured by atomic force microscopy, scanning electron microscopy and X-ray diffraction, covered a range from 5 x 10(8) to 3 x 10(10) cm(-2). Carrier concentration was measured by capacitance-voltage-, and Hall effect measurements and photoluminescence at 2 K was recorded. A model which accounts for the photoluminescence intensity as a function of dislocation density and carrier concentration in GaN is developed. The model shows good agreement with experimental results for typical GaN dislocation densities, 5 x 10(8)-1 x 10(10) cm(-2), and carrier concentrations 4 x 10(16)-1 x 10(18) cm(-3). © 2005 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2005.01.010
http://hdl.handle.net/11536/13761
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2005.01.010
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 278
Issue: 1-4
起始頁: 406
結束頁: 410
Appears in Collections:Conferences Paper


Files in This Item:

  1. 000228916300076.pdf