Title: 短通道V型場效電晶體研製和其電氣特性
Short Channel V-MOSFET Fabrication & Its Eletrical Properties
Authors: 陳建輝
C.H. Chen
Issue Date: Apr-1976
Publisher: 交大學刊編輯委員會
Abstract: Short channel n-VMOS and p-VMOS field effect transistors are designed fabricated by using anisotropic etching solution of hydrazine and water mixture. The modified first order theory is developed for V-groove MOS structure to account for the non-uniform gate oxide thickness. It is found that the developed theory is in excellent agreement with the experimental data. VMOS fabrication techniques are discussed and the electrical properties of the fabricated discrete n-VMOS and p-VMOS devices are measured and examined.
URI: http://hdl.handle.net/11536/137577
Journal: 交通大學學報
The Journal of National Chiao Tung University
Volume: 1
Begin Page: 57
End Page: 70
Appears in Collections:The Journal of National Chiao Tung University

Files in This Item:

  1. HT001307-04.pdf