標題: The Aluminum P-Silicon Schottky Barrier—Its Barrier Height and Spectral Response under Low Irradiance
作者: 馮德昭
胡定華
Der-Jau Fung
Ding-Hua Hu
公開日期: Mar-1974
出版社: 交大學刊編輯委員會
摘要: Schottky barriers are formed by deposition of thin aluminum film onto p-silicon wafer with a very thin interfacial layer of natural oxide. The barrier height has been measured to be arrouud 0.80v, which is substautially greater than the formerly reported value by other investigators. This is believed due to the thin interfacial layer of oxide saturates the dangling bonds on the semiconductor surface and results in a less density of surface states. The spectral response of the shallow surface barrier under low irradiance is studied with a monochromatic light source from wavelength 0.4μto 0.9μ. The measued result, which is quite different from that of a conventional p-n junction photovoltaic cell, shows no diminution in the infrared region, and a quantum efficiency higher than 75% is obtained.
URI: http://hdl.handle.net/11536/137504
期刊: 交大學刊
SCIENCE BULLETIN NATIONAL CHIAO-TUNG UNIVERSITY
Volume: 7
Issue: 1
起始頁: 42
結束頁: 48
Appears in Collections:Science Bulletin National Chiao-Tung University


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