標題: Large-Signal Analysis of BARITT Diodes
作者: 褚冀良
施敏
J.L.Chu
S.M.Sze
公開日期: 二月-1973
出版社: 交大學刊編輯委員會
摘要: Large-signal properties of p+νnp and associated BARITT (Barrier Injection Transit Time)diodes are analyzed. An accurate computer program(Sempak) is used which considers the space-charge balance, dependence of carrier mobilities on impurity concentration and electric field, and carrier generation and recombination. The static properties of BARITT diodes are also considered. General expressions for the flat-band voltage and the differential reactance are obtained. The results show that the p+νnp structure is the best choice which gives optimum performances both in static and microwave characteristics.
URI: http://hdl.handle.net/11536/137486
期刊: 交大學刊
SCIENCE BULLETIN NATIONAL CHIAO-TUNG UNIVERSITY
Volume: 6
Issue: 1
起始頁: 43
結束頁: 52
顯示於類別:交大學刊


文件中的檔案:

  1. HT001302-04.pdf