標題: On the Structural Properties of Flash-Evaporated Thin Film GaAs with the Presense of Tin Vapor During Growth
作者: 胡定華
D.H.Hu
公開日期: 一月-1972
出版社: 交大學刊編輯委員會
摘要: Structural analysis of x-ray diffraction peaks for flash-evaporated GaAs thin films has shown that the crystalline size is enhanced by the presence of tin vapor pressure during growth. This phenomenon can be related to the regrown process as the tin moves from the bulk to the outer growth surface. The forcing mechanism for tin movement is a temperature gradient.
URI: http://hdl.handle.net/11536/137476
期刊: 交大學刊
SCIENCE BULLETIN NATIONAL CHIAO-TUNG UNIVERSITY
Volume: 5
Issue: 2
起始頁: 52
結束頁: 59
顯示於類別:交大學刊


文件中的檔案:

  1. HT001301-05.pdf