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dc.contributor.author薩支唐zh_TW
dc.contributor.author陳偉文zh_TW
dc.contributor.authorC.T.Sahen_US
dc.contributor.authorL.Forbesen_US
dc.contributor.authorW.W.Chenen_US
dc.date.accessioned2017-10-06T06:18:02Z-
dc.date.available2017-10-06T06:18:02Z-
dc.date.issued1972-01en_US
dc.identifier.urihttp://hdl.handle.net/11536/137472-
dc.description.abstractA one-deep-energy- level impurity, space-charge neutral and steady-state model is proposed and nerified in n-type silicon N+IN+ diode samples which are overcompensated but not inverted by gold acceptors in the slightly n-type I-region. The model is as follows. If the photoionization rate of trapped holes at the impurity centeris greater than electrons, then an extrinsic monochromatic light will increase the trapped electron concentration. To maintain quasi-neutrality and a constant steady-state trapped electron concentration (equal to the concentration of the shallow level donor), the injected electron concentration into the compensated n-type I-region must decrease . Thus, the electron or the total conduction current must also decrease since the hole concentration is very low in the presence of a large sweep-out electric field and the hole conduction current may be neglected. This model has successfully predicted the observed large negative photocurrent (NPC)which is as much as 2/3 of the dark current , the large intrinsic optical gain (about 50) and the sublinearity in dark current.en_US
dc.language.isoen_USen_US
dc.publisher交大學刊編輯委員會zh_TW
dc.titleA New Model of Negative Photocurrent__Invited Paperen_US
dc.typeCampus Publicationsen_US
dc.identifier.journal交大學刊zh_TW
dc.identifier.journalSCIENCE BULLETIN NATIONAL CHIAO-TUNG UNIVERSITYen_US
dc.citation.volume5en_US
dc.citation.issue2en_US
dc.citation.spage1en_US
dc.citation.epage10en_US
Appears in Collections:Science Bulletin National Chiao-Tung University


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