標題: A New Model of Negative Photocurrent__Invited Paper
作者: 薩支唐
陳偉文
C.T.Sah
L.Forbes
W.W.Chen
公開日期: 一月-1972
出版社: 交大學刊編輯委員會
摘要: A one-deep-energy- level impurity, space-charge neutral and steady-state model is proposed and nerified in n-type silicon N+IN+ diode samples which are overcompensated but not inverted by gold acceptors in the slightly n-type I-region. The model is as follows. If the photoionization rate of trapped holes at the impurity centeris greater than electrons, then an extrinsic monochromatic light will increase the trapped electron concentration. To maintain quasi-neutrality and a constant steady-state trapped electron concentration (equal to the concentration of the shallow level donor), the injected electron concentration into the compensated n-type I-region must decrease . Thus, the electron or the total conduction current must also decrease since the hole concentration is very low in the presence of a large sweep-out electric field and the hole conduction current may be neglected. This model has successfully predicted the observed large negative photocurrent (NPC)which is as much as 2/3 of the dark current , the large intrinsic optical gain (about 50) and the sublinearity in dark current.
URI: http://hdl.handle.net/11536/137472
期刊: 交大學刊
SCIENCE BULLETIN NATIONAL CHIAO-TUNG UNIVERSITY
Volume: 5
Issue: 2
起始頁: 1
結束頁: 10
顯示於類別:交大學刊


文件中的檔案:

  1. HT001301-01.pdf