標題: Temperature Dependence of Ionization Rates in Ge
作者: 戴寶通
張俊彥
B.T.Dai
C.Y.Chang
公開日期: 四月-1971
出版社: 交大學刊編輯委員會
摘要: The ionization rates of eletron and hole in germanium have been measured from 200°K to 300°K and were fit to the modified Baraff theory, in which the optical phononmean free path is temperature dependent and can be fit to the formula:λ=λ0 tanhEp/2KT, where Ep is the average optical phonon energy. The asymptotic optical phonon mean free paths wherin deduced from experiments are λ=73±4Å and λoh=84±4Å for electron and hole respectively which are in good agreement with that of Miller's data obtained at room temperature. A simplified approach to calculate the ionization rates from the photomultiplication data has also been deduced for the one sided abrupt junction.
URI: http://hdl.handle.net/11536/137463
期刊: 交大學刊
SCIENCE BULLETIN NATIONAL CHIAO-TUNG UNIVERSITY
Volume: 5
Issue: 1
起始頁: 77
結束頁: 82
顯示於類別:交大學刊


文件中的檔案:

  1. HT001300-05.pdf