Title: Temperature Dependence of Ionization Rates in Ge
Authors: 戴寶通
張俊彥
B.T.Dai
C.Y.Chang
Issue Date: Apr-1971
Publisher: 交大學刊編輯委員會
Abstract: The ionization rates of eletron and hole in germanium have been measured from 200°K to 300°K and were fit to the modified Baraff theory, in which the optical phononmean free path is temperature dependent and can be fit to the formula:λ=λ0 tanhEp/2KT, where Ep is the average optical phonon energy. The asymptotic optical phonon mean free paths wherin deduced from experiments are λ=73±4Å and λoh=84±4Å for electron and hole respectively which are in good agreement with that of Miller's data obtained at room temperature. A simplified approach to calculate the ionization rates from the photomultiplication data has also been deduced for the one sided abrupt junction.
URI: http://hdl.handle.net/11536/137463
Journal: 交大學刊
SCIENCE BULLETIN NATIONAL CHIAO-TUNG UNIVERSITY
Volume: 5
Issue: 1
Begin Page: 77
End Page: 82
Appears in Collections:Science Bulletin National Chiao-Tung University


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